由上下电极覆盖的铁电薄膜中最小180度电畴尺寸

陈永秋; 刘玉岚; 王彪

由上下电极覆盖的铁电薄膜中最小180度电畴尺寸

1.
哈尔滨理工大学机械动力工程学院,哈尔滨 150080;2.中山大学理工学院应用力学系,广州 510275

基金项目: 国家自然科学基金资助项目(50232030;10172030;10572155)

详细信息

作者简介:
陈永秋(1963- ),男,黑龙江人,副教授;刘玉岚(1962- ),女,吉林人,博士,教授(联系人.Tel:+86-20-84110006;Fax:+86-20-84115692;E-mail:stslyl@zsu.edu.cn);王彪(1963- ),男,辽宁人,博士,教授.

中图分类号: O322
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出版历程
- 收稿日期: 2005-06-07
- 修回日期: 2006-04-30
- 刊出日期: 2006-08-15

Minimum Size of 180 Degree Domains in Ferroelectric Thin Films Covered by Electrodes

1.
School of Mechanical and Power Engineering, Harbin University of Science and Technology, Harbin 150080, P. R. China;

摘要

摘要: 在较低的电压下,铁电畴发生反转的性能对于研发高密度铁电存储器是至关重要的．为了实现高密度存储,铁电畴必须做得愈小愈好．然而,当外加电场撤去后,很小的铁电畴是不稳定的,会发生缩小,直致消失，导致存储的信息消失．为解决此问题，发展了一种通用的方法用于决定避免反向反转的铁电畴的尺寸．做为一个例子，确定了由上下电极覆盖的铁电薄膜中最小180度电畴尺寸．该研究可以用于许多相似的问题．
- 铁电膜 /
- 180度铁电畴 /
- 稳定分析 /
- 反向反转
Abstract: Ferroelectric domain switching under low voltage or short pulses is of interest to the development of high-density random access memory(FRAM)devices.Being necessarily very small in size,instability and back switching often occurs when the external voltage is removed,and creates serious problems.A general approach to determine the minimum size of ferroelectric domain to avoid back switching was developed,and as an example,a 180 degree domain in a ferroelectric thin film covered by the upper and lower electrodes was considered in detail.The results show that the approach is generally applicable to many other fields,including phase transformation,nucleation and expansion of dislocation loops in thin films,etc.
- ferroelectric film /
- 180 degree domain /
- stability analysis /
- back switching

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参考文献(13)

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由上下电极覆盖的铁电薄膜中最小180度电畴尺寸

作者简介:
陈永秋(1963- ),男,黑龙江人,副教授;刘玉岚(1962- ),女,吉林人,博士,教授(联系人.Tel:+86-20-84110006;Fax:+86-20-84115692;E-mail:stslyl@zsu.edu.cn);王彪(1963- ),男,辽宁人,博士,教授.

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Minimum Size of 180 Degree Domains in Ferroelectric Thin Films Covered by Electrodes

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由上下电极覆盖的铁电薄膜中最小180度电畴尺寸

作者简介: 陈永秋(1963- ),男,黑龙江人,副教授;刘玉岚(1962- ),女,吉林人,博士,教授(联系人.Tel:+86-20-84110006;Fax:+86-20-84115692;E-mail:stslyl@zsu.edu.cn);王彪(1963- ),男,辽宁人,博士,教授.

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Minimum Size of 180 Degree Domains in Ferroelectric Thin Films Covered by Electrodes

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出版历程

目录

作者简介:
陈永秋(1963- ),男,黑龙江人,副教授;刘玉岚(1962- ),女,吉林人,博士,教授(联系人.Tel:+86-20-84110006;Fax:+86-20-84115692;E-mail:stslyl@zsu.edu.cn);王彪(1963- ),男,辽宁人,博士,教授.