Static Buckling Behaviors of Piezoelectric Semiconductor Beams With Steigmann-Ogden Surface Effects

ZHAN Chunxiao; LI Xiaobao; WANG Meiqin

doi:10.21656/1000-0887.450200

Volume 45 Issue 10

Oct. 2024

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ZHAN Chunxiao, LI Xiaobao, WANG Meiqin. Static Buckling Behaviors of Piezoelectric Semiconductor Beams With Steigmann-Ogden Surface Effects[J]. Applied Mathematics and Mechanics, 2024, 45(10): 1300-1312. doi: 10.21656/1000-0887.450200

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Static Buckling Behaviors of Piezoelectric Semiconductor Beams With Steigmann-Ogden Surface Effects

doi: 10.21656/1000-0887.450200

School of Civil Engineering, Hefei University of Technology, Hefei 230009, P.R.China

Received Date: 2024-07-09
Rev Recd Date: 2024-09-15
Publish Date: 2024-10-01

Abstract

Abstract

The surface elastic and flexoelectric effects significantly influence the mechanical behaviors of nanoscale materials and structures. The static buckling behaviors of piezoelectric semiconductor (PS) beams were studied through the establishment of an Euler-Bernoulli beam theoretical model in view of the Steigmann-Ogden surface elasticity and flexoelectricity. The governing equations and associated boundary conditions were derived under the Hamiltonian variational principle. In combination with the conservation equations for electrostatics and linear drift-diffusion equations, the analytical solutions of the effective elastic constants and critical buckling loads were obtained under both short and open circuit conditions. Numerical calculations were carried out to explore the effective elastic behaviors of the nanoscale PS beam under the effects of flexoelectricity, surface elasticity and shielding of charge carriers. This work provides a valuable guidance for designing high-performance electronic devices with piezoelectric semiconductor beams.
- piezoelectric semiconductor beam,
- buckling,
- surface effect,
- flexoelectric effect

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References(56)

References

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